Impact of B<sub>2</sub>H<sub>6</sub> plasma treatment on contact resistivity in silicon heterojunction solar cells
نویسندگان
چکیده
Abstract We investigated the effect of B 2 H 6 plasma treatment on p-type hydrogenated amorphous silicon (p-a-Si:H) surfaces for high-performance heterojunction (SHJ) solar cells. Secondary ion mass spectroscopy measurements revealed that boron concentration at p-a-Si:H surface is increased by employing treatment. Furthermore, specific contact resistance decreased about one-third after No degradation passivation performance induced The power conversion efficiency SHJ cells with improved increase in fill factor (FF) due to series and shunt resistance. From numerical simulations, upward band bending enhanced heterointerface between transparent conductive oxide (TCO) treatment, which responsible FF owing facilitated tunneling holes from c-Si layers TCO/p-a-Si:H heterointerface.
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 2023
ISSN: ['0021-4922', '1347-4065']
DOI: https://doi.org/10.35848/1347-4065/acc953